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| PD - 91733A IRG4BC10K INSULATED GATE BIPOLAR TRANSISTOR Features * Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V * Generation 4 IGBT design provides higher efficiency than Generation 3 * Industry standard TO-220AB package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-channel Benefits * Generation 4 IGBTs offer highest efficiency available * IGBTs optimized for specified application conditions TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load CurrentR Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 9.0 5.0 18 18 10 20 34 38 15 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.5 --- 2.0 (0.07) Max. 3.3 --- 80 --- Units C/W g (oz) www.irf.com 1 4/24/2000 IRG4BC10K Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage T 18 -- Temperature Coeff. of Breakdown Voltage -- 0.58 -- 2.39 Collector-to-Emitter Saturation Voltage -- 3.25 -- 2.63 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -11 Forward Transconductance U 1.2 1.8 -- -- Zero Gate Voltage Collector Current -- -- -- -- Gate-to-Emitter Leakage Current -- -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA 2.62 IC = 5.0A VGE = 15V -- IC = 9.0A See Fig.2, 5 V -- IC = 5.0A , TJ = 150C 6.5 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 50 V, IC = 5.0A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 19 29 IC = 5.0A 2.9 4.3 nC VCC = 400V See Fig.8 9.8 15 VGE = 15V 11 -- 24 -- TJ = 25C ns 51 77 IC = 5.0A, VCC = 480V 190 290 VGE = 15V, RG = 100 0.16 -- Energy losses include "tail" 0.10 -- mJ See Fig. 9,10,14 0.26 0.32 -- -- s VCC = 400V, TJ = 125C VGE = 15V, RG = 100 , VCPK < 500V 11 -- TJ = 150C, 27 -- IC = 5.0A, VCC = 480V ns 67 -- VGE = 15V, RG = 100 350 -- Energy losses include "tail" 0.47 -- mJ See Fig. 10,11,14 7.5 -- nH Measured 5mm from package 220 -- VGE = 0V 29 -- pF VCC = 30V See Fig. 7 7.5 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) S Repetitive rating; pulse width limited by maximum junction temperature. R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 100, (See fig. 13a) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. 2 www.irf.com IRG4BC10K 14 For both: Triangular wave: 12 Loa d C urre nt (A ) 10 Duty cycle: 50% T J = 125C T sink= 90C Gate drive as specified Power Dissipation = 9.2 W Clamp voltage: 80% of rated 8 Square wave: 60% of rated voltage 6 4 Ideal diodes 2 0 0.1 1 10 A 100 f, Fre quen cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25 C 10 I C , Collector-to-Emitter Current (A) I C , Collector Current (A) T = 150 C J 10 TJ = 150 C TJ = 25 C 1 5 10 1 1.0 V = 15V 20s PULSE WIDTH GE 2.0 3.0 4.0 5.0 6.0 7.0 V = 50V 5s PULSE WIDTH CC 15 20 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 5s PULSE WIDTH www.irf.com 3 IRG4BC10K 10 5.0 8 VCE , Collector-to-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE I C = 10 A Maximum DC Collector Current(A) 4.0 6 3.0 IC = 5 A I C = 2.5 A 4 2.0 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC10K 400 VGE , Gate-to-Emitter Voltage (V) 300 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 5.0A 16 C, Capacitance (pF) Cies 200 12 8 100 C oes C res 4 0 1 10 100 0 0 4 8 12 16 20 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.28 Total Switching Losses (mJ) 0.26 Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C I C = 5A 10 100 RG = Ohm VGE = 15V VCC = 480V 0.24 1 IC = 10 A IC = 5 A IC = 2.5 A 0.22 0.20 0 20 40 60 80 100 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ( ) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC10K 1.2 Total Switching Losses (mJ) RG TJ VCC 1.0 VGE 0.8 I C , Collector Current (A) = 100 Ohm = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 10 0.6 0.4 0.2 2 4 6 8 SAFE OPERATING AREA 1 10 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC10K L 50V 1 00 0V Q VC * 0 - 480V D .U .T. RL = 480V 4 X IC@25C 480F 960V R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4BC10K Case Outline and Dimensions TO-220AB 2.8 7 (.1 1 3 ) 2.6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 3.78 (.149) 3.54 (.139) -A 6 .4 7 (.255) 6 .1 0 (.240) 1.15 (.0 45) M IN -B- 4.69 (.185) 4.20 (.165) 1.32 (.05 2) 1.22 (.04 8) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2. 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 20 A B . 3X 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 3.96 (.1 60) 3.55 (.1 40) LEAD 1234- A S S IG N M E N T S G A TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160) 3.55 (.140) 0.93 (.037) 0.69 (.027) MBAM 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0 ) 2X 3X 3X 0.55 (.0 22) 0.46 (.0 18) 0 .3 6 (.0 1 4 ) 2.92 (.115 ) 2.64 (.104 ) CONFORMS TO JEDEC OUTLINE TO-220AB D im e n s io n s in M illim e te rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com |
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